N-Channel MOSFET, 100 A, 40 V, 8-Pin PQFN Infineon IRLH5034TRPBF
- RS Stock No.:
- 168-6030
- Mfr. Part No.:
- IRLH5034TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)*
£2,096.00
(exc. VAT)
£2,516.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £0.524 | £2,096.00 |
*price indicative
- RS Stock No.:
- 168-6030
- Mfr. Part No.:
- IRLH5034TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PQFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 156 W | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 5mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 82 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6mm | |
| Height | 0.85mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Series | HEXFET | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PQFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 156 W | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 82 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6mm | ||
Height 0.85mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Series HEXFET | ||
- COO (Country of Origin):
- CN
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