N-Channel MOSFET, 10 A, 80 V, 8-Pin SOIC Infineon IRF7854TRPBF

Subtotal (1 reel of 4000 units)*

£1,432.00

(exc. VAT)

£1,720.00

(inc. VAT)

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Per unit
Per Reel*
4000 +£0.358£1,432.00

*price indicative

RS Stock No.:
168-5972
Mfr. Part No.:
IRF7854TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

80 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

27 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4mm

Number of Elements per Chip

1

Length

5mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.5mm

Forward Diode Voltage

1.3V

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.