N-Channel MOSFET, 67 A, 150 V, 9 + Tab-Pin L8 Infineon IRF7779L2TRPBF
- RS Stock No.:
- 168-5968
- Mfr. Part No.:
- IRF7779L2TRPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 168-5968
- Mfr. Part No.:
- IRF7779L2TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 67 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | L8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 9 + Tab | |
| Maximum Drain Source Resistance | 11 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 125 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 97 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 7.1mm | |
| Length | 9.15mm | |
| Forward Diode Voltage | 1.3V | |
| Height | 0.52mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | DirectFET, HEXFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 67 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type L8 | ||
Mounting Type Surface Mount | ||
Pin Count 9 + Tab | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 125 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 97 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 7.1mm | ||
Length 9.15mm | ||
Forward Diode Voltage 1.3V | ||
Height 0.52mm | ||
Minimum Operating Temperature -55 °C | ||
Series DirectFET, HEXFET | ||
- COO (Country of Origin):
- CN