Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
- RS Stock No.:
- 168-5958
- Mfr. Part No.:
- IRF6648TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4800 units)*
£3,187.20
(exc. VAT)
£3,825.60
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 14 January 2026
Units | Per unit | Per Reel* |
---|---|---|
4800 + | £0.664 | £3,187.20 |
*price indicative
- RS Stock No.:
- 168-5958
- Mfr. Part No.:
- IRF6648TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 86 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | DirectFET ISOMETRIC | |
Series | DirectFET, HEXFET | |
Mounting Type | Surface Mount | |
Maximum Drain Source Resistance | 7 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.9V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 89 W | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 36 nC @ 10 V | |
Width | 5.05mm | |
Number of Elements per Chip | 1 | |
Length | 6.35mm | |
Maximum Operating Temperature | +150 °C | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -40 °C | |
Height | 0.5mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 86 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DirectFET ISOMETRIC | ||
Series DirectFET, HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 89 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 36 nC @ 10 V | ||
Width 5.05mm | ||
Number of Elements per Chip 1 | ||
Length 6.35mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -40 °C | ||
Height 0.5mm | ||
- COO (Country of Origin):
- CN
DirectFET® Power MOSFET, Infineon
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm