Infineon CoolMOS™ P7 N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1

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Subtotal (1 reel of 2500 units)*

£730.00

(exc. VAT)

£875.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500£0.292£730.00
5000 +£0.277£692.50

*price indicative

RS Stock No.:
168-5917
Mfr. Part No.:
IPD80R1K4P7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Series

CoolMOS™ P7

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.41mm

Forward Diode Voltage

0.9V

COO (Country of Origin):
CN

Infineon CoolMOS™P7 Power MOSFET


The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.