N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK Infineon IPD60R380P6ATMA1

Subtotal (1 reel of 2500 units)*

£2,287.50

(exc. VAT)

£2,745.00

(inc. VAT)

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2500 +£0.915£2,287.50

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RS Stock No.:
168-5911
Mfr. Part No.:
IPD60R380P6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10.6 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

19 nC @ 10 V

Length

6.73mm

Height

2.41mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

COO (Country of Origin):
CN

Infineon CoolMOS™E6/P6 series Power MOSFET


The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.