STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW28N60DM2
- RS Stock No.:
- 168-5897
- Mfr. Part No.:
- STW28N60DM2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
£71.34
(exc. VAT)
£85.62
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 24 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £2.378 | £71.34 |
| 60 - 120 | £1.902 | £57.06 |
| 150 + | £1.712 | £51.36 |
*price indicative
- RS Stock No.:
- 168-5897
- Mfr. Part No.:
- STW28N60DM2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | MDmesh DM2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 5.15mm | |
| Number of Elements per Chip | 1 | |
| Length | 15.75mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V | |
| Height | 20.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.6V | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series MDmesh DM2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 5.15mm | ||
Number of Elements per Chip 1 | ||
Length 15.75mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 39 nC @ 10 V | ||
Height 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.6V | ||
- COO (Country of Origin):
- CN
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics