Texas Instruments FemtoFET N-Channel MOSFET, 3.1 A, 30 V, 3-Pin PICOSTAR CSD17381F4T
- RS Stock No.:
- 168-4358
- Mfr. Part No.:
- CSD17381F4T
- Brand:
- Texas Instruments
Bulk discount available
Subtotal (1 reel of 250 units)*
£105.25
(exc. VAT)
£126.25
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 250 | £0.421 | £105.25 |
| 500 - 1000 | £0.379 | £94.75 |
| 1250 - 2250 | £0.358 | £89.50 |
| 2500 + | £0.341 | £85.25 |
*price indicative
- RS Stock No.:
- 168-4358
- Mfr. Part No.:
- CSD17381F4T
- Brand:
- Texas Instruments
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.1 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PICOSTAR | |
| Series | FemtoFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 250 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.65V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 1.04mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 1.04 nC @ 4.5 V | |
| Width | 0.64mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.35mm | |
Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.1 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PICOSTAR | ||
Series FemtoFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 1.04mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 1.04 nC @ 4.5 V | ||
Width 0.64mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 0.35mm | ||
- COO (Country of Origin):
- MY
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