onsemi MegaFET N-Channel MOSFET, 16 A, 50 V, 3-Pin DPAK RFD16N05LSM9A
- RS Stock No.:
- 166-2656
- Mfr. Part No.:
- RFD16N05LSM9A
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£840.00
(exc. VAT)
£1,007.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.336 | £840.00 |
*price indicative
- RS Stock No.:
- 166-2656
- Mfr. Part No.:
- RFD16N05LSM9A
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 50 V | |
| Series | MegaFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 47 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 60 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 50 V | ||
Series MegaFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 47 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 60 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 80 nC @ 10 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.