onsemi PowerTrench N-Channel MOSFET, 6.3 A, 30 V, 6-Pin SSOT-6 FDC655BN
- RS Stock No.:
- 166-2423
- Mfr. Part No.:
- FDC655BN
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£384.00
(exc. VAT)
£462.00
(inc. VAT)
FREE delivery for orders over £50.00
- 999,999,000 unit(s) shipping from 05 February 2026
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.128 | £384.00 |
*price indicative
- RS Stock No.:
- 166-2423
- Mfr. Part No.:
- FDC655BN
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 6.3 A | |
Maximum Drain Source Voltage | 30 V | |
Series | PowerTrench | |
Package Type | SSOT-6 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 36 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 1.6 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Width | 1.7mm | |
Length | 3mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 5 nC @ 5 V, 9 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Height | 1mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SSOT-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 1.7mm | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 5 nC @ 5 V, 9 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.