onsemi PowerTrench N-Channel MOSFET, 7.5 A, 100 V, 8-Pin Power 33 FDMC86116LZ
- RS Stock No.:
- 166-1665
- Mfr. Part No.:
- FDMC86116LZ
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£1,032.00
(exc. VAT)
£1,239.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 07 January 2026
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.344 | £1,032.00 |
*price indicative
- RS Stock No.:
- 166-1665
- Mfr. Part No.:
- FDMC86116LZ
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 7.5 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | Power 33 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 178 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 19 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 3.3mm | |
Length | 3.3mm | |
Typical Gate Charge @ Vgs | 2 nC @ 4.5 V, 4 nC @ 10 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 0.75mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.5 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type Power 33 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 178 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 19 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 3.3mm | ||
Length 3.3mm | ||
Typical Gate Charge @ Vgs 2 nC @ 4.5 V, 4 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.