Infineon HEXFET N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743PBF
- RS Stock No.:
- 166-0945
- Mfr. Part No.:
- IRLR8743PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 75 units)*
£58.50
(exc. VAT)
£70.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 225 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | £0.78 | £58.50 |
| 150 - 300 | £0.624 | £46.80 |
| 375 - 675 | £0.585 | £43.88 |
| 750 - 1425 | £0.539 | £40.43 |
| 1500 + | £0.499 | £37.43 |
*price indicative
- RS Stock No.:
- 166-0945
- Mfr. Part No.:
- IRLR8743PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 160 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 135 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 39 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 160 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 135 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.22mm | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 39 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
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