Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1

Unavailable
RS will no longer stock this product.
RS Stock No.:
166-0823
Mfr. Part No.:
IPG20N06S4L26ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

46 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

33 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

2

Length

5.15mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

5.9mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Minimum Operating Temperature

-55 °C

Series

OptiMOS

Forward Diode Voltage

1.3V

Height

0.75mm

RoHS Status: Exempt

COO (Country of Origin):
MY