Dual N-Channel MOSFET, 10 A, 12 V, 8-Pin SOIC Infineon IRF7910TRPBF
- RS Stock No.:
- 165-8053
- Mfr. Part No.:
- IRF7910TRPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 165-8053
- Mfr. Part No.:
- IRF7910TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 4mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 17 nC @ 4.5 V | |
| Series | HEXFET | |
| Forward Diode Voltage | 1.3V | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 4mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 17 nC @ 4.5 V | ||
Series HEXFET | ||
Forward Diode Voltage 1.3V | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Dual N-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
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