Infineon HEXFET N-Channel MOSFET, 87 A, 30 V, 3-Pin TO-220AB IRF3709ZPBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
165-7571
Mfr. Part No.:
IRF3709ZPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

87 A

Maximum Drain Source Voltage

30 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

17 nC @ 4.5 V

Height

8.77mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.