N-Channel MOSFET, 70 A, 100 V, 3-Pin DPAK Infineon IPD70N10S3L12ATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Length

6.5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

59 nC @ 10 V

Maximum Operating Temperature

+175 °C

Series

OptiMOS T

Minimum Operating Temperature

-55 °C

Height

2.3mm