N-Channel MOSFET, 4.4 A, 650 V, 3-Pin DPAK Infineon IPD60R950C6ATMA1

Subtotal (1 reel of 2500 units)*

£760.00

(exc. VAT)

£912.50

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Reel*
2500 +£0.304£760.00

*price indicative

RS Stock No.:
165-7523
Mfr. Part No.:
IPD60R950C6ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.4 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Series

CoolMOS C6

Height

2.41mm

Infineon CoolMOS™C6/C7 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.