N-Channel MOSFET, 80 A, 20 V, 8-Pin TDSON Infineon BSC046N02KSGAUMA1

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RS will no longer stock this product.
RS Stock No.:
165-7521
Mfr. Part No.:
BSC046N02KSGAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

20 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

2.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

5.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

21 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.35mm

Height

1.1mm

Series

OptiMOS 2

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.