N-Channel MOSFET, 45 A, 80 V, 3-Pin DPAK Infineon IRFR2607ZPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

80 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Maximum Operating Temperature

+175 °C

Length

6.73mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

34 nC @ 10 V

Minimum Operating Temperature

-55 °C

Series

HEXFET

Height

2.39mm