P-Channel MOSFET, 15 A, 100 V, 3-Pin DPAK Infineon SPD15P10PGBTMA1

RS Stock No.:: 165-5980
Mfr. Part No.:: SPD15P10PGBTMA1
Brand:: Infineon

P-Channel MOSFET, 15 A, 100 V, 3-Pin DPAK Infineon SPD15P10PGBTMA1

View all MOSFETs

Discontinued product

RS Stock No.:: 165-5980
Mfr. Part No.:: SPD15P10PGBTMA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: CN

Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	15 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	240 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	128 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	37 nC @ 10 V
Width	6.22mm
Length	6.73mm
Minimum Operating Temperature	-55 °C
Height	2.41mm
Series	SIPMOS

RS Stock No.:: 165-5980
Mfr. Part No.:: SPD15P10PGBTMA1
Brand:: Infineon