N-Channel MOSFET, 31 A, 100 V, 3-Pin DPAK Infineon IRFR3410TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

2.39mm

Series

HEXFET