Dual N/P-Channel MOSFET, 4.7 A, 5.7 A, 20 V, 8-Pin SOIC Infineon IRF7307TRPBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
165-5937
Mfr. Part No.:
IRF7307TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

4.7 A, 5.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ, 140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.7V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

20 nC @ 4.5 V, 22 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Series

HEXFET

Height

1.5mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MY

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.