N-Channel MOSFET, 9.7 A, 100 V, 3-Pin D2PAK Infineon IRF520NSTRLPBF
- RS Stock No.:
- 165-5891
- Mfr. Part No.:
- IRF520NSTRLPBF
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 165-5891
- Mfr. Part No.:
- IRF520NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.7 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.65mm | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.7 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.65mm | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NSTRLPBF
This MOSFET is designed for efficient switching and amplification across various applications. Its high power handling capacity offers versatility in the fields of automation and electronics. With advanced process technology, this device ensures performance and reliability, making it suitable for operational environments. The characteristics of this MOSFET enhance circuit performance significantly.
Features & Benefits
• Low on-resistance contributes to improved energy efficiency
• High drain current rating of 9.7A supports robust performance
• Maximum drain-source voltage of 100V provides application flexibility
• Enhancement mode enables effective switching capabilities
• Surface mount design allows for compact PCB layouts
• High drain current rating of 9.7A supports robust performance
• Maximum drain-source voltage of 100V provides application flexibility
• Enhancement mode enables effective switching capabilities
• Surface mount design allows for compact PCB layouts
Applications
• Employed in power management systems for energy conversion
• Suitable for automation controls requiring rapid switching
• Applied in motor control circuits for precision
• Utilised in renewable energy systems such as solar inverters
• Used in audio amplifiers to enhance sound quality
• Suitable for automation controls requiring rapid switching
• Applied in motor control circuits for precision
• Utilised in renewable energy systems such as solar inverters
• Used in audio amplifiers to enhance sound quality
What type of mounting is suitable for this device?
This component features a surface mount design, making it compatible with automated PCB assembly processes and ideal for high-density layouts.
Can it manage high temperatures during operation?
Yes, it has a maximum operating temperature of +175°C, making it apt for harsh environments without compromising performance.
Is this suitable for applications requiring fast switching?
Yes, its rapid switching speed enhances performance in applications like PWM and DC-DC converters.
What is the inductance characteristic of this device?
The internal drain inductance is typically 4.5nH, contributing to its responsive operation.
How is power dissipation handled in this MOSFET?
It allows for a maximum power dissipation of 48W, ensuring thermal stability and effective performance in various circuits.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
