N-Channel MOSFET, 5.1 A, 150 V, 8-Pin SOIC Infineon IRF7815TRPBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
165-5713
Mfr. Part No.:
IRF7815TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

150 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

43 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

25 nC @ 10 V

Length

5mm

Number of Elements per Chip

1

Transistor Material

Si

Width

4mm

Series

HEXFET

Height

1.5mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
TH

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.