Infineon OptiMOS T2 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK IPB180N06S4H1ATMA2

Unavailable
RS will no longer stock this product.
RS Stock No.:
165-5669
Mfr. Part No.:
IPB180N06S4H1ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Series

OptiMOS T2

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.45mm

Transistor Material

Si

Length

10.31mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

208 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN