N-Channel MOSFET, 100 A, 55 V, 3-Pin D2PAK Infineon IPB100N06S2L05ATMA1

Discontinued product

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	55 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	5.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	10.31mm
Number of Elements per Chip	1
Width	9.45mm
Typical Gate Charge @ Vgs	170 nC @ 10 V
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Series	OptiMOS
Height	4.57mm

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