Infineon HEXFET N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK IRFS7437TRLPBF
- RS Stock No.:
- 165-5484
- Mfr. Part No.:
- IRFS7437TRLPBF
- Brand:
- Infineon
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Subtotal (1 reel of 800 units)*
£490.40
(exc. VAT)
£588.80
(inc. VAT)
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In Stock
- 2,400 unit(s) ready to ship
- Plus 999,996,800 unit(s) shipping from 13 January 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £0.613 | £490.40 |
| 1600 + | £0.582 | £465.60 |
*price indicative
- RS Stock No.:
- 165-5484
- Mfr. Part No.:
- IRFS7437TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 250 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 250 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Width 9.65mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 4.83mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF
This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its ability to manage high current and voltage levels makes it well-suited for advanced technology applications.
Features & Benefits
• Supports a maximum continuous drain current of 250A for high-power applications
• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups
• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses
• Designed for surface mounting, simplifying installation
• Capable of handling rapid switching applications, which enhances efficiency
• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups
• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses
• Designed for surface mounting, simplifying installation
• Capable of handling rapid switching applications, which enhances efficiency
Applications
• Suitable for brushed motor drive
• Ideal for battery-powered circuits, enabling efficient power usage
• Employed in half-bridge and full-bridge topologies for precise control
• Utilised in synchronous rectifier to enhance energy savings
• Applicable in resonant mode power supplies for stable performance
• Ideal for battery-powered circuits, enabling efficient power usage
• Employed in half-bridge and full-bridge topologies for precise control
• Utilised in synchronous rectifier to enhance energy savings
• Applicable in resonant mode power supplies for stable performance
How is the power dissipation managed during operation?
Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.
What is the significance of the low Rds(on) value?
The low Rds(on) value minimises energy loss during operation, improving efficiency in high-current applications.
Can this be used in high-temperature environments?
With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.
What installation considerations should I be aware of?
Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
