N-Channel MOSFET, 120 A, 75 V, 3-Pin TO-220AB Infineon IRFB3307PBF
- RS Stock No.:
- 165-5450
- Mfr. Part No.:
- IRFB3307PBF
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 165-5450
- Mfr. Part No.:
- IRFB3307PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 22.86mm | |
| Transistor Material | Si | |
| Length | 10.66mm | |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 4.82mm | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 22.86mm | ||
Transistor Material Si | ||
Length 10.66mm | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 4.82mm | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard through-hole power package
High-current rating