Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG
- RS Stock No.:
- 163-1146
- Mfr. Part No.:
- NTZD5110NT1G
- Brand:
- ON Semiconductor
Discontinued
- RS Stock No.:
- 163-1146
- Mfr. Part No.:
- NTZD5110NT1G
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 310 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-563 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 280 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -6 V, +6 V | |
| Width | 1.3mm | |
| Typical Gate Charge @ Vgs | 0.7 nC @ 4.5 V | |
| Length | 1.7mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 310 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-563 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 280 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -6 V, +6 V | ||
Width 1.3mm | ||
Typical Gate Charge @ Vgs 0.7 nC @ 4.5 V | ||
Length 1.7mm | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Height 0.6mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor