onsemi GaN N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 NTP8G202NG
- RS Stock No.:
- 163-0293
- Mfr. Part No.:
- NTP8G202NG
- Brand:
- ON Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 163-0293
- Mfr. Part No.:
- NTP8G202NG
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 350 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 65 W | |
| Transistor Configuration | Cascode | |
| Maximum Gate Source Voltage | -18 V, +18 V | |
| Width | 4.83mm | |
| Length | 10.53mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 6.2 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | GaN | |
| Height | 15.75mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 2.1V | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 350 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Cascode | ||
Maximum Gate Source Voltage -18 V, +18 V | ||
Width 4.83mm | ||
Length 10.53mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 6.2 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material GaN | ||
Height 15.75mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 2.1V | ||
- COO (Country of Origin):
- CN