Wolfspeed Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module CCS020M12CM2

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
162-9726
Mfr. Part No.:
CCS020M12CM2
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

1200 V

Package Type

Module

Mounting Type

Screw Mount

Pin Count

28

Maximum Drain Source Resistance

208 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

167 W

Transistor Configuration

3 Phase

Maximum Gate Source Voltage

-10 V, +25 V

Number of Elements per Chip

6

Maximum Operating Temperature

+150 °C

Width

47mm

Typical Gate Charge @ Vgs

61.5 nC @ 20 V, 61.5 nC @ 5 V

Length

108mm

Transistor Material

SiC

Height

17mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

2.3V

COO (Country of Origin):
CN

Wolfspeed Silicon Carbide Power MOSFET Modules


Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements


MOSFET Transistors, Wolfspeed