Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2

  • RS Stock No. 162-9721
  • Mfr. Part No. CAS300M12BM2
  • Brand Wolfspeed
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 404 A
Maximum Drain Source Voltage 1200 V
Package Type Half Bridge
Mounting Type Panel Mount
Pin Count 7
Maximum Drain Source Resistance 9.8 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.3V
Minimum Gate Threshold Voltage 1.8V
Maximum Power Dissipation 1.66 kW
Transistor Configuration Series
Maximum Gate Source Voltage -10 V, +25 V
Number of Elements per Chip 2
Maximum Operating Temperature +150 °C
Height 30mm
Typical Gate Charge @ Vgs 1025 nC @ 20 V, 1025 nC @ 5 V
Forward Diode Voltage 2.5V
Transistor Material SiC
Width 61.4mm
Length 106.4mm
Available to back order for despatch 19/02/2020
Price Each (In a Box of 10)
£ 489.271
(exc. VAT)
£ 587.125
(inc. VAT)
Units
Per unit
Per Box*
10 +
£489.271
£4,892.71
*price indicative
Related Products
Low on-resistance Fast switching speed Fast reverse recovery ...
Description:
Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, Ro HS compliant.
Silicon carbide (Si C) MOSFETs feature very low ...
Description:
Silicon carbide (Si C) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.
Silicon Carbide (Si C) MOSFET uses a completely ...
Description:
Silicon Carbide (Si C) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced ...
Industry-leading 16mΩ RDS(on)1200V VBR (minimum) across entire operating ...
Description:
Industry-leading 16mΩ RDS(on)1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C]+15V gate drive voltage Low-impedance package with Kelvin source pin> 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance Fast intrinsic diode with low reverse recovery (QRR)Easy to parallel and simple to drive ApplicationsSolar ...