Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2

  • RS Stock No. 162-9721
  • Mfr. Part No. CAS300M12BM2
  • Brand Wolfspeed
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 404 A
Maximum Drain Source Voltage 1200 V
Package Type Half Bridge
Mounting Type Panel Mount
Pin Count 7
Maximum Drain Source Resistance 9.8 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.3V
Minimum Gate Threshold Voltage 1.8V
Maximum Power Dissipation 1.66 kW
Transistor Configuration Series
Maximum Gate Source Voltage -10 V, +25 V
Number of Elements per Chip 2
Maximum Operating Temperature +150 °C
Forward Diode Voltage 2.5V
Width 61.4mm
Typical Gate Charge @ Vgs 1025 nC @ 20 V, 1025 nC @ 5 V
Length 106.4mm
Height 30mm
Transistor Material SiC
Available to back order for despatch 03/03/2021
Price Each (In a Box of 10)
£ 478.296
(exc. VAT)
£ 573.955
(inc. VAT)
Units
Per unit
Per Box*
10 +
£478.296
£4,782.96
*price indicative
Related Products
Low on-resistance Fast switching speed Fast reverse recovery ...
Description:
Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, Ro HS compliant.
Silicon Carbide (Si C) MOSFET uses a completely ...
Description:
Silicon Carbide (Si C) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced ...
Wolfspeed extends its leadership in SiC technology by ...
Description:
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies ...
The Infineon 30 mO SiC MOSFET build on ...
Description:
The Infineon 30 mO SiC MOSFET build on a state of the trench semiconductor process helped to combine performance with reliability. It can be used in solutions for solar energy systems, Electron volt charging, Uninterruptible power supply (UPS), Power Supplies, Motor Control and Drives and many other applications. Powerful body ...