Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF

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Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
162-3296
Mfr. Part No.:
IRF9910TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

20 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.55V

Minimum Gate Threshold Voltage

1.65V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Width

4mm

Minimum Operating Temperature

-55 °C

Series

IRF9910

Height

1.5mm

Forward Diode Voltage

1V

20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

Low RDS(ON) at 4.5V VGS
Very Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Dual N-Channel MOSFET