Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF
- RS Stock No.:
- 162-3296
- Mfr. Part No.:
- IRF9910TRPBF
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 162-3296
- Mfr. Part No.:
- IRF9910TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 18.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.55V | |
| Minimum Gate Threshold Voltage | 1.65V | |
| Maximum Power Dissipation | 2 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V | |
| Number of Elements per Chip | 2 | |
| Width | 4mm | |
| Series | IRF9910 | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 18.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.55V | ||
Minimum Gate Threshold Voltage 1.65V | ||
Maximum Power Dissipation 2 W | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V | ||
Number of Elements per Chip 2 | ||
Width 4mm | ||
Series IRF9910 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Low RDS(ON) at 4.5V VGS
Very Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Dual N-Channel MOSFET
Very Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Dual N-Channel MOSFET