Nexperia N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3 PMXB40UNEZ
- RS Stock No.:
- 153-1958P
- Mfr. Part No.:
- PMXB40UNEZ
- Brand:
- Nexperia
Bulk discount available
Subtotal 125 units (supplied on a continuous strip)*
£10.125
(exc. VAT)
£12.125
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 10,000 unit(s) shipping from 19 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 125 - 1225 | £0.081 |
| 1250 - 2475 | £0.076 |
| 2500 - 3725 | £0.073 |
| 3750 + | £0.072 |
*price indicative
- RS Stock No.:
- 153-1958P
- Mfr. Part No.:
- PMXB40UNEZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.2 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | DFN1010D-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 121 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 8.33 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 8 V | |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V | |
| Width | 1.05mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 1.15mm | |
| Height | 0.36mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.2 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type DFN1010D-3 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 121 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 8.33 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 8 V | ||
Typical Gate Charge @ Vgs 66 nC @ 10 V | ||
Width 1.05mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 1.15mm | ||
Height 0.36mm | ||
Minimum Operating Temperature -55 °C | ||
12 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters