Nexperia N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-23 PMV280ENEAR

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Subtotal 250 units (supplied on a reel)*

£26.25

(exc. VAT)

£31.50

(inc. VAT)

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250 - 600£0.105
625 - 1225£0.102
1250 - 2475£0.099
2500 +£0.097

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Packaging Options:
RS Stock No.:
153-0676P
Mfr. Part No.:
PMV280ENEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

892 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

3mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.4mm

Height

1mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

N-channel MOSFETs 75 V - 200 V, You have now entered one of the world's foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.

100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits