Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
- RS Stock No.:
- 152-6358P
- Mfr. Part No.:
- SI2302DDS-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£62.25
(exc. VAT)
£74.75
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 75 unit(s) shipping from 27 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 600 | £0.249 |
| 625 - 1225 | £0.225 |
| 1250 - 2475 | £0.212 |
| 2500 + | £0.198 |
*price indicative
- RS Stock No.:
- 152-6358P
- Mfr. Part No.:
- SI2302DDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 75 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.85V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 0.71 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Length | 3.04mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 3.5 nC @ 4.5 V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.85V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 0.71 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Length 3.04mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 3.5 nC @ 4.5 V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
Load Switching for Portable Devices
DC/DC Converter
TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
Load Switching for Portable Devices
DC/DC Converter