Nexperia N-Channel MOSFET, 4.1 A, 80 V, 8-Pin DFN2020 PMPB95ENEAX
- RS Stock No.:
- 151-3118P
- Mfr. Part No.:
- PMPB95ENEAX
- Brand:
- Nexperia
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£62.75
(exc. VAT)
£75.25
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 6,000 unit(s) shipping from 31 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 600 | £0.251 |
| 625 - 1225 | £0.244 |
| 1250 - 2475 | £0.238 |
| 2500 + | £0.232 |
*price indicative
- RS Stock No.:
- 151-3118P
- Mfr. Part No.:
- PMPB95ENEAX
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.1 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | DFN2020 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 202 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.7V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 15.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 2.1mm | |
| Typical Gate Charge @ Vgs | 9.9 nC @ 4 V | |
| Length | 2.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 0.65mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.1 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type DFN2020 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 202 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.7V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 15.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 2.1mm | ||
Typical Gate Charge @ Vgs 9.9 nC @ 4 V | ||
Length 2.1mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 0.65mm | ||
80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified