Diodes Inc DMN N-Channel MOSFET, 150 A, 40 V, 3-Pin TO-220AB DMNH4005SCT
- RS Stock No.:
- 146-4818P
- Mfr. Part No.:
- DMNH4005SCT
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 15 units (supplied in a tube)*
£22.38
(exc. VAT)
£26.85
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 50 unit(s) shipping from 29 October 2025
- Plus 999,999,945 unit(s) shipping from 22 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 15 - 25 | £1.492 |
| 30 + | £1.416 |
*price indicative
- RS Stock No.:
- 146-4818P
- Mfr. Part No.:
- DMNH4005SCT
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-220AB | |
| Series | DMN | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 165 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.66mm | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Width | 9.01mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 4.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220AB | ||
Series DMN | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 165 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.66mm | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Width 9.01mm | ||
Forward Diode Voltage 1.2V | ||
Height 4.82mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
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