P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 Infineon SPP15P10PHXKSA1

  • RS Stock No. 145-9743
  • Mfr. Part No. SPP15P10PHXKSA1
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 15 A
Maximum Drain Source Voltage 100 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 240 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2.1V
Maximum Power Dissipation 128 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 37 nC @ 10 V
Minimum Operating Temperature -55 °C
Transistor Material Si
Series SIPMOS
Width 4.57mm
Maximum Operating Temperature +175 °C
Height 15.95mm
Length 10.36mm
Forward Diode Voltage 1.35V
50 In stock for FREE next working day delivery
Price Each (In a Tube of 50)
£ 1.078
(exc. VAT)
£ 1.294
(inc. VAT)
Units
Per unit
Per Tube*
50 - 200
£1.078
£53.90
250 - 950
£0.916
£45.80
1000 - 2450
£0.809
£40.45
2500 +
£0.701
£35.05
*price indicative
Related Products
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Compact power MOSFET modules from Semikron incorporating single ...
Description:
Compact power MOSFET modules from Semikron incorporating single and multiple devices in a variety of configurations. Typical applications include switched mode power supplies, DC servo drives and Uninterruptible Power Supplies.
OptiMOS™ products are available in high performance packages ...
Description:
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement ...
OptiMOS™ products are available in high performance packages ...
Description:
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement ...