Dual N/P-Channel MOSFET, 530 mA, 950 mA, 20 V, 6-Pin SOT-363 Infineon BSD235CH6327XTSA1

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RS Stock No.:
145-9662
Mfr. Part No.:
BSD235CH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

530 mA, 950 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

2mm

Transistor Material

Si

Typical Gate Charge @ Vgs

0.34 nC @ 4.5 V, 0.4 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Series

OptiMOS 2

Height

0.8mm

COO (Country of Origin):
CN