Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 IRFP7530PBF
- RS Stock No.:
- 145-9658
- Mfr. Part No.:
- IRFP7530PBF
- Brand:
- Infineon
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Subtotal (1 tube of 25 units)*
£41.20
(exc. VAT)
£49.45
(inc. VAT)
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In Stock
- 500 unit(s) ready to ship
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | £1.648 | £41.20 |
| 50 - 100 | £1.566 | £39.15 |
| 125 - 225 | £1.50 | £37.50 |
| 250 - 475 | £1.434 | £35.85 |
| 500 + | £1.335 | £33.38 |
*price indicative
- RS Stock No.:
- 145-9658
- Mfr. Part No.:
- IRFP7530PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 195 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | StrongIRFET | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 341 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 274 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 195 A | ||
Maximum Drain Source Voltage 60 V | ||
Series StrongIRFET | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 341 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 274 nC @ 10 V | ||
Transistor Material Si | ||
Length 15.87mm | ||
Width 5.31mm | ||
Maximum Operating Temperature +175 °C | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP7530PBF
This MOSFET is intended for high-performance power management applications, offering features that support a variety of electronic systems. It facilitates efficient energy transfer and minimises power loss, making it a vital component in advanced circuits used in automation and motor control.
Features & Benefits
• Continuous drain current of 195A improves operational efficiency
• Maximum drain-source voltage of 60V accommodates diverse applications
• Low on-resistance of 2mΩ reduces power dissipation
• Withstands extreme temperatures ranging from -55°C to +175°C
• Gate threshold voltage of 2.1V to 3.7V optimises switching performance
• High avalanche and dynamic dV/dt ruggedness enhances reliability
• Maximum drain-source voltage of 60V accommodates diverse applications
• Low on-resistance of 2mΩ reduces power dissipation
• Withstands extreme temperatures ranging from -55°C to +175°C
• Gate threshold voltage of 2.1V to 3.7V optimises switching performance
• High avalanche and dynamic dV/dt ruggedness enhances reliability
Applications
• Suitable for brushed motor drive
• Used in battery-powered circuits for enhanced efficiency
• Applicable in half-bridge and full-bridge configurations for flexible circuit design
• Effective in synchronous rectifier for improved efficiency
• Utilised in DC/DC and AC/DC converters within power electronics
• Used in battery-powered circuits for enhanced efficiency
• Applicable in half-bridge and full-bridge configurations for flexible circuit design
• Effective in synchronous rectifier for improved efficiency
• Utilised in DC/DC and AC/DC converters within power electronics
What are the benefits of using it in high-current applications?
Employing this MOSFET in high-current conditions allows for effective power management while minimising heat generation due to its low on-resistance, thus ensuring stable performance in rigorous operations.
How does temperature affect performance?
Temperature influences operational limits, with a maximum junction temperature of 175°C ensuring functionality under severe conditions. Its thermal resistance properties help maintain reliability in high-temperature environments.
Can it be integrated into existing circuits?
Yes, its standard TO-247 package design permits easy integration into both new and existing circuit layouts, making it suitable for replacements or upgrades across various applications.
What should be considered for effective heat dissipation?
To uphold optimal performance, ensure appropriate cooling mechanisms are in place, as the maximum power dissipation is 341W. The use of heatsinks or fans can assist in managing temperature effectively.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
