N-Channel MOSFET, 9.9 A, 650 V, 3-Pin TO-220FP Infineon IPA60R650CEXKSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

650 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.9mm

Number of Elements per Chip

1

Length

10.65mm

Transistor Material

Si

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

0.9V

Minimum Operating Temperature

-40 °C

Series

CoolMOS CE

Height

16.15mm