Infineon HEXFET N-Channel MOSFET, 208 A, 40 V, 3-Pin I2PAK IRFSL7440PBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
145-8923
Mfr. Part No.:
IRFSL7440PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

208 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

90 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Number of Elements per Chip

1

Width

4.83mm

Forward Diode Voltage

1.3V

Height

9.65mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 40V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.