Infineon HEXFET N-Channel MOSFET, 59 A, 75 V, 3-Pin DPAK IRFR7746PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

75 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

99 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Transistor Material

Si

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.39mm

Forward Diode Voltage

1.2V