N-Channel MOSFET, 13.8 A, 600 V, 3-Pin TO-247 Infineon IPW60R280E6FKSA1
- RS Stock No.:
- 145-8714
- Mfr. Part No.:
- IPW60R280E6FKSA1
- Brand:
- Infineon
Subtotal (1 tube of 30 units)*
£32.76
(exc. VAT)
£39.30
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £1.092 | £32.76 |
*price indicative
- RS Stock No.:
- 145-8714
- Mfr. Part No.:
- IPW60R280E6FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13.8 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.21mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 43 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 16.13mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.1mm | |
| Series | CoolMOS E6 | |
| Forward Diode Voltage | 0.9V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 13.8 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.21mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 43 nC @ 10 V | ||
Transistor Material Si | ||
Length 16.13mm | ||
Minimum Operating Temperature -55 °C | ||
Height 21.1mm | ||
Series CoolMOS E6 | ||
Forward Diode Voltage 0.9V | ||
- COO (Country of Origin):
- CN
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