N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 Infineon IPP60R190P6XKSA1

Unavailable
RS will no longer stock this product.
RS Stock No.:
145-8598
Mfr. Part No.:
IPP60R190P6XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

37 nC @ 10 V

Length

10.36mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4.57mm

Series

CoolMOS P6

Height

15.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

COO (Country of Origin):
MY

Infineon CoolMOS™E6/P6 series Power MOSFET


The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.