N-Channel MOSFET, 1.9 A, 600 V, 3-Pin IPAK onsemi FQU2N60CTU
- RS Stock No.:
- 145-5532
- Mfr. Part No.:
- FQU2N60CTU
- Brand:
- ON Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 145-5532
- Mfr. Part No.:
- FQU2N60CTU
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.7 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 2.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 8.5 nC @ 10 V | |
| Length | 6.6mm | |
| Transistor Material | Si | |
| Series | QFET | |
| Minimum Operating Temperature | -55 °C | |
| Height | 6.1mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.7 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 2.3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 8.5 nC @ 10 V | ||
Length 6.6mm | ||
Transistor Material Si | ||
Series QFET | ||
Minimum Operating Temperature -55 °C | ||
Height 6.1mm | ||
- COO (Country of Origin):
- MY