onsemi QFET N-Channel MOSFET, 12.8 A, 100 V, 3-Pin TO-220AB FQP13N10
- RS Stock No.:
- 145-5363
- Mfr. Part No.:
- FQP13N10
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 50 units)*
£48.50
(exc. VAT)
£58.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.97 | £48.50 |
| 100 + | £0.912 | £45.60 |
*price indicative
- RS Stock No.:
- 145-5363
- Mfr. Part No.:
- FQP13N10
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12.8 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Series | QFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 65 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.1mm | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.4mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 12.8 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.1mm | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Width 4.7mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.4mm | ||
