onsemi PowerTrench N-Channel MOSFET, 16 A, 30 V, 3-Pin TO-220AB FDP8896
- RS Stock No.:
- 145-5358
- Mfr. Part No.:
- FDP8896
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£38.10
(exc. VAT)
£45.70
(inc. VAT)
FREE delivery for orders over £50.00
- Final 700 unit(s), ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.762 | £38.10 |
100 + | £0.716 | £35.80 |
*price indicative
- RS Stock No.:
- 145-5358
- Mfr. Part No.:
- FDP8896
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 16 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | TO-220AB | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 6 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 80 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
Width | 4.83mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 80 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.