onsemi SuperFET II N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 FCP190N60E
- RS Stock No.:
- 145-5329
- Mfr. Part No.:
- FCP190N60E
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£57.20
(exc. VAT)
£68.65
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,200 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £1.144 | £57.20 |
*price indicative
- RS Stock No.:
- 145-5329
- Mfr. Part No.:
- FCP190N60E
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | SuperFET II | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 208 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.4mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series SuperFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Length 10.67mm | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.4mm | ||
- COO (Country of Origin):
- CN
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